Atomic Structure of the Sb-Stabilized GaAs(100)-( <span class="aps-inline-formula"><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline"><mn>2</mn><mo>×</mo><mn>4</mn></math></span>) Surface

N. Esser; A. I. Shkrebtii; U. Resch-Esser; C. Springer; W. Richter; W. G. Schmidt; F. Bechstedt; R. Del Sole

doi:10.1103/PhysRevLett.77.4402

Atomic Structure of the Sb-Stabilized GaAs(100)-( $2 \times 4$ ) Surface

N. Esser, A. I. Shkrebtii, U. Resch-Esser, C. Springer, W. Richter, W. G. Schmidt, F. Bechstedt, and R. Del Sole

Phys. Rev. Lett. 77, 4402 – Published 18 November 1996

Abstract

The microscopic structure of the Sb stabilized GaAs(100)-( $2 \times 4$ ) surfaces is investigated combining reflectance anisotropy spectroscopy with first-principles total energy minimization and tight-binding calculations of optical properties. We show that the model accepted so far, containing three Sb dimers in the outermost layer, is not a stable surface geometry. Our results reveal a coexistence of Sb and Ga dimers on the Sb-stabilized $(2 \times 4)$ surface.