Abstract
We report the first evidence that the transfer mechanism plays a significant role in carrier transport in type-I semiconductor superlattices under an electric field. An anomalously delayed photocurrent was observed in a GaAs/AlAs type-I superlattice under ultrashort optical pulse excitation. This phenomenon can be explained by a switch of the electron transport path from to , caused by an electric-field induced change of the subband alignment of the second state () in the well and the state in the adjacent barrier.
- Received 7 July 1995
DOI:https://doi.org/10.1103/PhysRevLett.75.4500
©1995 American Physical Society