Raman studies of steric hindrance and surface relaxation of stepped H-terminated silicon surfaces

Melissa A. Hines, Yves J. Chabal, Timothy D. Harris, and Alexander L. Harris
Phys. Rev. Lett. 71, 2280 – Published 4 October 1993
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Abstract

Polarized angle-resolved Raman spectra of the Si-H stretching vibrations on stepped H-terminated Si(111) surfaces confirm the constrained orientation of the step dihydride derived from ab initio cluster calculations. They further show that the step normal modes involve little concerted motion of the step atoms, indicating that step relaxation reduces the steric interaction much further than predicted.

  • Received 2 August 1993

DOI:https://doi.org/10.1103/PhysRevLett.71.2280

©1993 American Physical Society

Authors & Affiliations

Melissa A. Hines, Yves J. Chabal, Timothy D. Harris, and Alexander L. Harris

  • AT&T Bell Laboratories, Murray Hill, New Jersey 07974

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Issue

Vol. 71, Iss. 14 — 4 October 1993

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