Novel wetting behavior of He4 on cesium

P. Taborek and J. E. Rutledge
Phys. Rev. Lett. 68, 2184 – Published 6 April 1992
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Abstract

We have measured He4 adsorption isotherms on a cesium substrate above and below Tλ using a quartz-microbalance technique. The results show that the cesium surface remains dry until the pressure almost reaches the saturated vapor pressure. At liquid-vapor coexistence, however, the wetting film continuously thickens to more than 30 layers. Below Tλ, the film at coexistence is superfluid. Above Tλ, we resolve a feature in the isotherm just below saturated vapor pressure which is characteristic of a prewetting transition.

  • Received 21 January 1992

DOI:https://doi.org/10.1103/PhysRevLett.68.2184

©1992 American Physical Society

Authors & Affiliations

P. Taborek and J. E. Rutledge

  • Department of Physics, University of California, Irvine, California 92717

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Issue

Vol. 68, Iss. 14 — 6 April 1992

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