We have found that the 1/f-noise magnitude of unirradiated metal-oxide-semiconductor (MOS) transistors correlates strikingly with the radiation-induced-hole trapping efficiency of the oxide ($f_{\mathrm{OT}}$). This suggests that the previously unidentified defect that causes 1/f noise in MOS transistors is linked to the radiation-induced-hole trap, the ‘‘E’ center,’’ or to a direct precursor (likely a simple oxygen vacancy) known to be present in ${\mathrm{SiO}}_2$ before irradiation. We derive a simple equation that relates the noise and $f_{\mathrm{OT}}$.

• Received 26 October 1989

DOI:https://doi.org/10.1103/PhysRevLett.64.579