Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces

D. R. Heslinga; H. H. Weitering; D. P. van der Werf; T. M. Klapwijk; T. Hibma

doi:10.1103/PhysRevLett.64.1589

Atomic-structure-dependent Schottky barrier at epitaxial Pb/Si(111) interfaces

D. R. Heslinga, H. H. Weitering, D. P. van der Werf, T. M. Klapwijk, and T. Hibma

Phys. Rev. Lett. 64, 1589 – Published 26 March 1990

Abstract

The Schottky barrier of Pb grown epitaxially on n-type Si(111) has been studied. Two structures can be formed, which differ only in the arrangement of the first layer of Pb and Si atoms at the interface. One, a Si(111)(7×7)-Pb structure, has a Schottky-barrier height of 0.70 eV. The other, a Si(111)(√3 × √3 )R30°-Pb structure, has a barrier height of 0.93 eV. These results emphasize the importance of the local electronic structure for Schottky-barrier formation at ordered interfaces.

Received 27 December 1989

DOI:https://doi.org/10.1103/PhysRevLett.64.1589

Authors & Affiliations

D. R. Heslinga, H. H. Weitering, D. P. van der Werf, T. M. Klapwijk, and T. Hibma

Department of Applied Physics, University of Groningen, Nijenborgh 18, 9747 AG Groningen, The Netherlands
Department of Inorganic Chemistry, University of Groningen, Nijenborgh 16, 9747 AG Groningen, The Netherlands