Electron Tunneling Experiments on Amorphous Ge1xAux

W. L. McMillan and Jack Mochel
Phys. Rev. Lett. 46, 556 – Published 23 February 1981
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Abstract

Tunneling measurements of the electronic density of states of amorphous Ge1xAux near the metal-insulator transition at x=0.12 are reported. In the metallic phase there is a giant zero-bias anomaly with a minimum in the density of states at the Fermi energy. In the insulating phase a pseudogap opens, centered about the Fermi energy, with zero density of states at the Fermi energy.

  • Received 17 July 1980

DOI:https://doi.org/10.1103/PhysRevLett.46.556

©1981 American Physical Society

Authors & Affiliations

W. L. McMillan and Jack Mochel

  • Department of Physics and Material Research Laboratory, University of Illinois, Urbana, Illinois 61801

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Issue

Vol. 46, Iss. 8 — 23 February 1981

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