Model for the Electronic Structure of Amorphous Semiconductors

P. W. Anderson
Phys. Rev. Lett. 34, 953 – Published 14 April 1975
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Abstract

It is pointed out that a model which agrees well with the observed properties of semiconducting glasses is an attractive Hubbard model of localized states. Such a model has no gap for two-electron excitations but an energy gap for one-electron ones. The suggested physical model for a two-electron excitation is a new covalent bond in the structure, which is severely localized. It is also proposed that the one-electron excitation spectrum is wholly, or almost wholly, extended, and all observed gaps are identical with the mobility gap.

  • Received 25 November 1974

DOI:https://doi.org/10.1103/PhysRevLett.34.953

©1975 American Physical Society

Authors & Affiliations

P. W. Anderson*

  • Bell Laboratories, Murray Hill, New Jersey 07974, and Cavendish Laboratory, Cambridge CB3 OHE, England

  • *Work at Cavendish Laboratory supported by the Air Force Office of Scientific Research, U. S. Air Force, under Grant No. AFOSR 73-2449.

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Issue

Vol. 34, Iss. 15 — 14 April 1975

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