Selective Equilibration of Spin-Polarized Quantum Hall Edge States in Graphene

F. Amet, J. R. Williams, K. Watanabe, T. Taniguchi, and D. Goldhaber-Gordon
Phys. Rev. Lett. 112, 196601 – Published 12 May 2014
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Abstract

We report on transport measurements of dual-gated, single-layer graphene devices in the quantum Hall regime, allowing for independent control of the filling factors in adjoining regions. Progress in device quality allows us to study scattering between edge states when the fourfold degeneracy of the Landau level is lifted by electron correlations, causing edge states to be spin and/or valley polarized. In this new regime, we observe a dramatic departure from the equilibration seen in more disordered devices: edge states with opposite spins propagate without mixing. As a result, the degree of equilibration inferred from transport can reveal the spin polarization of the ground state at each filling factor. In particular, the first Landau level is shown to be spin polarized at half filling, providing an independent confirmation of a conclusion of Young et al. [Nat. Phys. 8, 550 (2012)]. The conductance in the bipolar regime is strongly suppressed, indicating that copropagating edge states, even with the same spin, do not equilibrate along PN interfaces. We attribute this behavior to the formation of an insulating ν=0 stripe at the PN interface.

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  • Received 3 July 2013

DOI:https://doi.org/10.1103/PhysRevLett.112.196601

© 2014 American Physical Society

Authors & Affiliations

F. Amet1, J. R. Williams2, K. Watanabe3, T. Taniguchi3, and D. Goldhaber-Gordon2

  • 1Department of Applied Physics, Stanford University, Stanford, California 94305, USA
  • 2Department of Physics, Stanford University, Stanford, California 94305, USA
  • 3Advanced Materials Laboratory, National Institute for Materials Science, 1-1 Namiki, Tsukuba 305-0044, Japan

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Issue

Vol. 112, Iss. 19 — 16 May 2014

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