Electronic Excitations of a Magnetic Impurity State in the Diluted Magnetic Semiconductor (Ga,Mn)As

M. Kobayashi, H. Niwa, Y. Takeda, A. Fujimori, Y. Senba, H. Ohashi, A. Tanaka, S. Ohya, P. N. Hai, M. Tanaka, Y. Harada, and M. Oshima

Phys. Rev. Lett. 112, 107203 – Published 12 March 2014

Abstract

The electronic structure of doped Mn in (Ga,Mn)As is studied by resonant inelastic x-ray scattering. From configuration-interaction cluster-model calculations, the line shapes of the Mn $L_{3}$ resonant inelastic x-ray scattering spectra can be explained by $d − d$ excitations from the Mn ground state dominated by charge-transferred states, in which hole carriers are bound to the Mn impurities, rather than a pure acceptor ${Mn}^{2 +}$ ground state. Unlike archetypical $d − d$ excitation, the peak widths are broader than the experimental energy resolution. We attribute the broadening to a finite lifetime of the $d − d$ excitations, which decay rapidly to electron-hole pairs in the host valence and conduction bands through the hybridization of the Mn $3 d$ orbital with the ligand band.

Received 31 May 2013

DOI:https://doi.org/10.1103/PhysRevLett.112.107203

Authors & Affiliations

M. Kobayashi^1,2,*, H. Niwa^1,2,3, Y. Takeda⁴, A. Fujimori⁵, Y. Senba⁶, H. Ohashi⁶, A. Tanaka⁷, S. Ohya⁸, P. N. Hai⁸, M. Tanaka⁸, Y. Harada^2,3,†, and M. Oshima^1,2

¹Department of Applied Chemistry, School of Engineering, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan
²Synchrotron Radiation Research Organization, The University of Tokyo, 1-490-2 Kouto, Sayo-cho, Tatsuno, Hyogo 679-5165, Japan
³Institute for Solid State Physics, The University of Tokyo, 1-1-1 Kouto, Sayo, Hyogo 679-5198, Japan
⁴Quantum Beam Science Directorate, Japan Atomic Energy Agency, Sayo-gun, Hyogo 679-5148, Japan
⁵Department of Physics, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-0033, Japan
⁶Japan Synchrotron Radiation Research Institute (JASRI), Sayo, Hyogo 679-5198, Japan
⁷Department of Quantum Matter, ADSM, Hiroshima University, Higashi-Hiroshima 739-8530, Japan
⁸Department of Electronic Engineering and Information Systems, The University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656, Japan

^*Corresponding author. masakik@post.kek.jp
^†Corresponding author. harada@issp.u-tokyo.ac.jp

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Vol. 112, Iss. 10 — 14 March 2014

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