Metal-Insulator Transition in SrTiO3x Thin Films Induced by Frozen-Out Carriers

Z. Q. Liu, D. P. Leusink, X. Wang, W. M. Lü, K. Gopinadhan, A. Annadi, Y. L. Zhao, X. H. Huang, S. W. Zeng, Z. Huang, A. Srivastava, S. Dhar, T. Venkatesan, and Ariando
Phys. Rev. Lett. 107, 146802 – Published 28 September 2011

Abstract

We report optical, electrical and magnetotransport properties of oxygen deficient SrTiO3 (SrTiO3x) thin films fabricated by pulsed laser deposition technique. The oxygen vacancies (Ovac) in the thin film are expected to be uniform. By comparing its electrical properties to those of bulk SrTiO3x, it was found that Ovac in bulk SrTiO3x is far from uniform over the whole material. The metal-insulator transition (MIT) observed in the SrTiO3x film was found to be induced by the carrier freeze-out effect. The low temperature frozen state can be reexcited by Joule heating, electric and intriguingly magnetic field.

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  • Received 20 April 2011

DOI:https://doi.org/10.1103/PhysRevLett.107.146802

© 2011 American Physical Society

Authors & Affiliations

Z. Q. Liu1,2, D. P. Leusink1,2,4, X. Wang1,2, W. M. Lü1,3, K. Gopinadhan1,3, A. Annadi1,2, Y. L. Zhao1,2, X. H. Huang1,3, S. W. Zeng1,2, Z. Huang1, A. Srivastava1,2, S. Dhar1,3, T. Venkatesan1,2,3, and Ariando1,2,*

  • 1NUSNNI-Nanocore, National University of Singapore, 117542 Singapore
  • 2Department of Physics, National University of Singapore, 117542 Singapore
  • 3Department of Electrical and Computer Engineering, National University of Singapore, 117542 Singapore
  • 4Faculty of Science and Technology and MESA+ Institute for Nanotechnology, University of Twente, 7500 AE Enschede, The Netherlands

  • *ariando@nus.edu.sg

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Vol. 107, Iss. 14 — 30 September 2011

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