Abstract
We have measured the electrically detected magnetic resonance of donor-doped silicon field-effect transistors in resonant - (9.7 GHz) and -band (94 GHz) microwave cavities. The two-dimensional electron gas resonance signal increases by 2 orders of magnitude from to band, while the donor resonance signals are enhanced by over 1 order of magnitude. Bolometric effects and spin-dependent scattering are inconsistent with the observations. We propose that polarization transfer from the donor to the two-dimensional electron gas is the main mechanism giving rise to the spin resonance signals.
- Received 16 December 2010
DOI:https://doi.org/10.1103/PhysRevLett.106.207601
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