Zero-Bias Anomalies in Narrow Tunnel Junctions in the Quantum Hall Regime

P. Jiang, C.-C. Chien, I. Yang, W. Kang, K. W. Baldwin, L. N. Pfeiffer, and K. W. West
Phys. Rev. Lett. 105, 246801 – Published 7 December 2010

Abstract

We report on the study of cleaved-edge-overgrown line junctions with a serendipitously created narrow opening in an otherwise thin, precise line barrier. Two sets of zero-bias anomalies are observed with an enhanced conductance for filling factors ν>1 and a strongly suppressed conductance for ν<1. A transition between the two behaviors is found near ν1. The zero-bias anomaly (ZBA) line shapes find explanation in Luttinger liquid models of tunneling between quantum Hall edge states. The ZBA for ν<1 occurs from strong backscattering induced by suppression of quasiparticle tunneling between the edge channels for the n=0 Landau levels. The ZBA for ν>1 arises from weak tunneling of quasiparticles between the n=1 edge channels.

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  • Received 23 May 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.246801

© 2010 The American Physical Society

Authors & Affiliations

P. Jiang1,2, C.-C. Chien1, I. Yang1, W. Kang1, K. W. Baldwin3, L. N. Pfeiffer3, and K. W. West3

  • 1James Franck Institute and Department of Physics, University of Chicago, Chicago, Illinois 60637, USA
  • 2Department of Physics, National Taiwan Normal University, Taipei 116, Taiwan
  • 3Department of Electrical Engineering, Princeton Univeristy, Princeton, New Jersey 08544, USA

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Issue

Vol. 105, Iss. 24 — 10 December 2010

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