Band Gap and Electronic Structure of an Epitaxial, Semiconducting ${\mathrm{Cr}}_{0.80}{\mathrm{Al}}_{0.20}$ Thin Film

Band Gap and Electronic Structure of an Epitaxial, Semiconducting ${Cr}_{0.80} {Al}_{0.20}$ Thin Film

Z. Boekelheide, A. X. Gray, C. Papp, B. Balke, D. A. Stewart, S. Ueda, K. Kobayashi, F. Hellman, and C. S. Fadley

Phys. Rev. Lett. 105, 236404 – Published 3 December 2010

Abstract

${Cr}_{1 - x} {Al}_{x}$ exhibits semiconducting behavior for $x = 0.15 - 0.26$ . This Letter uses hard x-ray photoemission spectroscopy and density functional theory to further understand the semiconducting behavior. Photoemission measurements of an epitaxial ${Cr}_{0.80} {Al}_{0.20}$ thin film show several features in the valence band region, including a gap at the Fermi energy ( $E_{F}$ ) for which the valence band edge is $95 \pm 14 meV$ below $E_{F}$ . Theory agrees well with the valence band measurements, and shows an incomplete gap at $E_{F}$ due to the hole band at $M$ shifting almost below $E_{F}$ .

Received 22 August 2010

DOI:https://doi.org/10.1103/PhysRevLett.105.236404

Authors & Affiliations

Z. Boekelheide^1,2,*, A. X. Gray^3,2, C. Papp^4,2, B. Balke^5,2, D. A. Stewart⁶, S. Ueda⁷, K. Kobayashi⁷, F. Hellman^1,2, and C. S. Fadley^3,2

¹Department of Physics, University of California, Berkeley, Berkeley, California 94720, USA
²Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720, USA
³Department of Physics, University of California, Davis, Davis, California 95616, USA
⁴Lehrstuhl für Physikalische Chemie II, Universität Erlangen-Nürnberg, Egerlandstr. 3, 91058 Erlangen, Germany
⁵Institut für Anorganische und Analytische Chemie Johannes Gutenberg Universität, 55099 Mainz, Germany
⁶Cornell Nanoscale Facility, Cornell University, Ithaca, New York 14853 USA
⁷NIMS Beamline Station at SPring-8, National Institute for Materials Science, Hyogo 678-5148, Japan

^*zboekelheide@berkeley.edu

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand

Issue

Vol. 105, Iss. 23 — 3 December 2010

Reuse & Permissions

Access Options

Author publication services for translation and copyediting assistance advertisement

Physical Review Letters

Band Gap and Electronic Structure of an Epitaxial, Semiconducting Cr0.80Al0.20 Thin Film

Z. Boekelheide, A. X. Gray, C. Papp, B. Balke, D. A. Stewart, S. Ueda, K. Kobayashi, F. Hellman, and C. S. Fadley

Phys. Rev. Lett. 105, 236404 – Published 3 December 2010

Abstract

Authors & Affiliations

Article Text (Subscription Required)

References (Subscription Required)

Issue

Access Options

Authorization Required

Other Options

Download & Share

Images

Figure 1

Figure 2

Figure 3

Figure 4

Log In

Search

Article Lookup

Paste a citation or DOI

Enter a citation

Band Gap and Electronic Structure of an Epitaxial, Semiconducting ${Cr}_{0.80} {Al}_{0.20}$ Thin Film