Damping of Exciton Rabi Rotations by Acoustic Phonons in Optically Excited InGaAs/GaAs Quantum Dots

A. J. Ramsay, Achanta Venu Gopal, E. M. Gauger, A. Nazir, B. W. Lovett, A. M. Fox, and M. S. Skolnick
Phys. Rev. Lett. 104, 017402 – Published 8 January 2010
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    Abstract

    We report experimental evidence identifying acoustic phonons as the principal source of the excitation-induced-dephasing (EID) responsible for the intensity damping of quantum dot excitonic Rabi rotations. The rate of EID is extracted from temperature dependent Rabi rotation measurements of the ground-state excitonic transition, and is found to be in close quantitative agreement with an acoustic-phonon model.

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    • Received 31 March 2009

    DOI:https://doi.org/10.1103/PhysRevLett.104.017402

    ©2010 American Physical Society

    Authors & Affiliations

    A. J. Ramsay1,*, Achanta Venu Gopal2, E. M. Gauger3, A. Nazir4, B. W. Lovett3, A. M. Fox1, and M. S. Skolnick1

    • 1Department of Physics and Astronomy, University of Sheffield, Sheffield, S3 7RH, United Kingdom
    • 2DCMP & MS, Tata Institute of Fundamental Research, Mumbai 400 005, India
    • 3Department of Materials, University of Oxford, Oxford OX1 3PH, United Kingdom
    • 4Department of Physics and Astronomy, University College London, London, WC1E 6BT, United Kingdom

    • *a.j.ramsay@shef.ac.uk

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    Vol. 104, Iss. 1 — 8 January 2010

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