Figure 1

(a) SEM micrograph of the InAs nanocrystals (NCs) layer. Inset shows schematics of the FET and NCs arrangements. (b) Room temperature time traces of current fluctuations in an ac-coupled FET channel at a low bias of 0.04 V under 1060 nm IR illumination of 10 mW in a spot of 1 mm diameter (upper panel) and under dark conditions.Reuse & Permissions

Figure 2

(a) Distribution of the current avalanche sizes in $\mathrm{ampere}\times \sec $ units. The dashed line represents the best fit to the power law in the intermediate size range. (b) Power spectral density of noise induced by IR light illumination. Solid lines represent the best fits to the power law. (c) Average avalanche size $⟨S⟩$ as a function of avalanche duration $T$, with the best fit to the power law $⟨S⟩\propto T^{1/\sigma \nu z}$ (dashed lines).Reuse & Permissions

Figure 3

Schematics of the mechanisms for charge avalanche triggering and propagation. (a) The avalanches are triggered by a structural transition in the molecules and propagate due to coupling between the molecules, which enforces transitions to all-trans state, thus modifying the barrier height indicated by the bold dash lines in the bridge region. The surface state in the GaAs side, indicated by the bold dash-dot line, is a deep impurity state which account for the asymmetric well behavior in both charge transfer directions. Valence and conduction band levels of the InAs dot are indicated by the dash-dotted bold lines in the NC region. (b) Schematics of the molecular layer structure showing all-trans domains and molecules in the gauche configuration.Reuse & Permissions

Figure 4

Distribution of the FET current fluctuations in the illuminated device at 300 K where a clear non-Gaussian distribution is observed at high amplitudes. The inset shows the Gaussian distribution of current fluctuations at 80 K.Reuse & Permissions