Exchange Bias Driven by the Dzyaloshinskii-Moriya Interaction and Ferroelectric Polarization at $G$-Type Antiferromagnetic Perovskite Interfaces

Exchange Bias Driven by the Dzyaloshinskii-Moriya Interaction and Ferroelectric Polarization at $G$ -Type Antiferromagnetic Perovskite Interfaces

Shuai Dong, Kunihiko Yamauchi, Seiji Yunoki, Rong Yu, Shuhua Liang, Adriana Moreo, J.-M. Liu, Silvia Picozzi, and Elbio Dagotto

Phys. Rev. Lett. 103, 127201 – Published 14 September 2009

Abstract

Exchange bias is usually rationalized invoking spin pinning effects caused by uncompensated antiferromagnetic interfaces. However, for compensated antiferromagnets other extrinsic factors, such as interface roughness or spin canting, have to be considered to produce a small uncompensation. As an alternative, here we propose two (related) possible mechanisms, driven by the intrinsic Dzyaloshinskii-Moriya interaction and ferroelectric polarization, for the explanation of exchange bias effects in perovskites with compensated $G$ -type antiferromagnetism. One of the mechanisms is only active when a multiferroic material is involved and it is controllable by electric fields.

Received 15 August 2009

DOI:https://doi.org/10.1103/PhysRevLett.103.127201

Authors & Affiliations

Shuai Dong^1,2,3, Kunihiko Yamauchi⁴, Seiji Yunoki^5,6, Rong Yu^1,2, Shuhua Liang^1,2, Adriana Moreo^1,2, J.-M. Liu^3,7, Silvia Picozzi⁴, and Elbio Dagotto^1,2

¹Department of Physics and Astronomy, University of Tennessee, Knoxville, Tennessee 37996, USA
²Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 32831, USA
³Nanjing National Laboratory of Microstructures, Nanjing University, Nanjing 210093, China
⁴Consiglio Nazionale delle Ricerche-Istituto Nazionale per la Fisica della Materia (CNR-INFM), CASTI Regional Laboratory, 67100 L’Aquila, Italy
⁵Computational Condensed Matter Physics Laboratory, RIKEN, Wako, Saitama 351-0198, Japan
⁶CREST, Japan Science and Technology Agency (JST), Kawaguchi, Saitama 332-0012, Japan
⁷International Center for Materials Physics, Chinese Academy of Sciences, Shenyang 110016, China

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Issue

Vol. 103, Iss. 12 — 18 September 2009

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