Evolution of Electronic Structure of Doped Mott Insulators: Reconstruction of Poles and Zeros of Green's Function

Evolution of Electronic Structure of Doped Mott Insulators: Reconstruction of Poles and Zeros of Green’s Function

Shiro Sakai, Yukitoshi Motome, and Masatoshi Imada

Phys. Rev. Lett. 102, 056404 – Published 4 February 2009

Abstract

We study the evolution of metals from Mott insulators in the carrier-doped 2D Hubbard model using a cluster extension of the dynamical mean-field theory. While the conventional metal is simply characterized by the Fermi surface (pole of the Green function $G$ ), interference of the zero surfaces of $G$ with the pole surfaces becomes crucial in the doped Mott insulators. Mutually interfering pole and zero surfaces are dramatically transferred over the Mott gap, when lightly doped holes synergetically loosen the doublon-holon binding. The heart of the Mott physics such as the pseudogap, hole pockets, Fermi arcs, in-gap states, Lifshitz transitions, and non-Fermi liquids appears as natural consequences of this global interference in the frequency space.