Figure 1

Device geometry. The semi-infinite gate on the left side (beneath the graphene sheet) controls the density drop ${\rho }_2-{\rho }_1$ across the junction, while another infinite backgate above the sheet (not shown) fixes the density ${\rho }_2$ at far right. The smooth curves with the arrows depict typical ballistic trajectories of an electron ($-$) and a hole ($+$). The wavy curve symbolizes their recombination via quantum tunneling.Reuse & Permissions

Figure 2

(a) Electron density in units of $4/D^2$ for $\alpha =1$, ${\rho }_0=75$ and $\alpha =0.1$, ${\rho }_0=100$. Thicker curves are from minimizing the TF functional, Eqs. (12, 13, 14); thinner lines are from replacing $E_0$ in this functional by the ground-state energy of Hamiltonian (15). The $p\mathrm{\text{−}}n$ interface is at $x=0$. (b) Magnitude of the electric field in units of $4\hslash v/e{D}^2$ for the same parameters. Numerical values “34” and “60” are the predictions of Eq. (2) for the nearby TF (thick) curves [20]. (c) Enlarged view of the $\alpha =0.1$ data from the panel (a) and the numerically evaluated Eq. (17).Reuse & Permissions