We report here the first observation of a pyroelectric effect in a nonpolar semiconductor. This effect originates in the temperature-dependent electric dipole of the PbTe $p-n$ junction. The junction was illuminated by a chopped ${\mathrm{CO}}_2$ laser beam, and periodic and single-pulse pyroelectric signals were observed and measured as a function of temperature, reverse bias voltage, and chopper frequency. The measured pyroelectric coefficient is $\approx {10}^{-3}\mu \mathrm{C}/{\mathrm{cm}}^2\mathrm{K}$ in the region of 40–80 K. The theoretical model describes quantitatively all experimental features. The time evolution of the temperature inside the junction region was reconstructed.

• Received 14 August 2007

DOI:https://doi.org/10.1103/PhysRevLett.100.057603