Intrinsic magnetic order and inhomogeneous transport in Gd-implanted zinc oxide

John Kennedy, Grant V. M. Williams, Peter P. Murmu, and Ben J. Ruck
Phys. Rev. B 88, 214423 – Published 23 December 2013

Abstract

We report the results from magnetic, resistivity, and Hall effect measurements on a ferromagnetically ordered 5% Gd low energy implanted ZnO single crystal. Temperature-dependent magnetization measurements show that the Gd ions do not contribute to the magnetic order; hence, the magnetic order is intrinsic. The electronic transport in the Gd-implanted region is inhomogeneous, and there is a nonlinear Hall resistance. The nonlinear Hall resistance is likely to be a consequence of the inhomogeneous transport and not due to an anomalous Hall effect.

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  • Received 2 September 2013

DOI:https://doi.org/10.1103/PhysRevB.88.214423

©2013 American Physical Society

Authors & Affiliations

John Kennedy1,2,*, Grant V. M. Williams2, Peter P. Murmu1,2, and Ben J. Ruck2

  • 1National Isotope Centre, GNS Science, P.O. Box 31312, Lower Hutt 5010, New Zealand
  • 2The MacDiarmid Institute for Advanced Materials and Nanotechnology, School of Chemical and Physical Sciences, Victoria University of Wellington, P.O. Box 600, Wellington 6140, New Zealand

  • *Corresponding author: J.Kennedy@gns.cri.nz

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Vol. 88, Iss. 21 — 1 December 2013

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