Nontrivial topological electronic structures in a single Bi(111) bilayer on different substrates: A first-principles study

Zhi-Quan Huang, Feng-Chuan Chuang, Chia-Hsiu Hsu, Yu-Tzu Liu, Hua-Rong Chang, Hsin Lin, and Arun Bansil
Phys. Rev. B 88, 165301 – Published 1 October 2013

Abstract

Electronic structures, minimum energy configurations, and band topology of strained Bi(111) single bilayers placed on a variety of semiconducting and insulating substrates are investigated using first-principles calculations. A topological phase diagram of a free-standing Bi bilayer is presented to help guide the selection of suitable substrates. The insulating hexagonal-BN is identified as the best candidate substrate material for supporting nontrivial topological insulating phase of Bi bilayer thin films. A planar hexagonal Bi layer is predicted under tensile strain, which we show could be realized on a SiC substrate. The Bi bilayer becomes metallic under the compressive strain induced by Si and Ge substrates.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 30 May 2013

DOI:https://doi.org/10.1103/PhysRevB.88.165301

©2013 American Physical Society

Authors & Affiliations

Zhi-Quan Huang1, Feng-Chuan Chuang1,*, Chia-Hsiu Hsu1, Yu-Tzu Liu1, Hua-Rong Chang1, Hsin Lin2,†, and Arun Bansil2

  • 1Department of Physics, National Sun Yat-Sen University, Kaohsiung 804, Taiwan
  • 2Department of Physics, Northeastern University, Boston, Massachusetts 02115, USA

  • *fchuang@mail.nsysu.edu.tw
  • nilnish@gmail.com

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 88, Iss. 16 — 15 October 2013

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×