Electronic properties of twisted trilayer graphene

E. Suárez Morell, M. Pacheco, L. Chico, and L. Brey
Phys. Rev. B 87, 125414 – Published 14 March 2013

Abstract

We study the electronic properties of a twisted trilayer graphene, where two of the layers have Bernal stacking and the third one has a relative rotation with respect to the AB-stacked layers. Near the Dirac point, the AB-twisted trilayer graphene spectrum shows two parabolic Bernal-like bands and a twistedlike Dirac cone. For small twist angles, the parabolic bands present a gap that increases for decreasing rotation angle. There is also a shift in the twistedlike Dirac cone with a similar angle dependence. We correlate the gap in the trilayer with the shift of the Dirac cone in an isolated twisted bilayer, which is due to the loss of electron-hole symmetry caused by sublattice mixing in the rotated geometry. Using a tight-binding and a continuum model, we derive an effective Hamiltonian which accounts for the relevant low-energy properties of this system.

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  • Received 14 January 2013

DOI:https://doi.org/10.1103/PhysRevB.87.125414

©2013 American Physical Society

Authors & Affiliations

E. Suárez Morell and M. Pacheco

  • Departamento de Física, Universidad Técnica Federico Santa María, Casilla 110-V, Valparaíso, Chile

L. Chico and L. Brey

  • Departamento de Teoría y Simulación de Materiales, Instituto de Ciencia de Materiales de Madrid (ICMM), Consejo Superior de Investigaciones Científicas (CSIC), C/Sor Juana Inés de la Cruz 3, 28049 Madrid, Spain

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Vol. 87, Iss. 12 — 15 March 2013

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