Giant plateau in the terahertz Faraday angle in gated Bi2Se3

Gregory S. Jenkins, Andrei B. Sushkov, Don C. Schmadel, M.-H. Kim, Matthew Brahlek, Namrata Bansal, Seongshik Oh, and H. Dennis Drew
Phys. Rev. B 86, 235133 – Published 19 December 2012

Abstract

We report gated terahertz Faraday angle measurements on epitaxial Bi2Se3 thin films capped with In2Se3. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface, which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau level in the low-frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau.

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  • Received 6 September 2012

DOI:https://doi.org/10.1103/PhysRevB.86.235133

©2012 American Physical Society

Authors & Affiliations

Gregory S. Jenkins1,2,*, Andrei B. Sushkov1,2,3, Don C. Schmadel1,2, M.-H. Kim1,2, Matthew Brahlek4, Namrata Bansal4, Seongshik Oh4, and H. Dennis Drew1,2,3

  • 1Department of Physics, University of Maryland at College park, College Park, Maryland, 20742, USA
  • 2Center for Nanophysics and Advanced Materials, University of Maryland at College park, College Park, Maryland, 20742, USA
  • 3Materials Research Science and Engineering Center, University of Maryland at College park, College Park, Maryland, 20742, USA
  • 4Department of Physics and Astronomy, The State University of New Jersey, Piscataway, New Jersey 08854, USA

  • *gregjenkins@myfastmail.com

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Issue

Vol. 86, Iss. 23 — 15 December 2012

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