Abstract
We report gated terahertz Faraday angle measurements on epitaxial BiSe thin films capped with InSe. A plateau is observed in the real part of the Faraday angle at an onset gate voltage corresponding to no band bending at the surface, which persists into accumulation. The plateau is two orders of magnitude flatter than the step size expected from a single Landau level in the low-frequency limit, quantized in units of the fine structure constant. At 8 T, the plateau extends over a range of gate voltage that spans an electron density greater than 14 times the quantum flux density. Both the imaginary part of the Faraday angle and transmission measurements indicate dissipative off-axis and longitudinal conductivity channels associated with the plateau.
- Received 6 September 2012
DOI:https://doi.org/10.1103/PhysRevB.86.235133
©2012 American Physical Society