Systematic study of ferroelectric, interfacial, oxidative, and doping effects on conductance of Pt/BaTiO3/Pt ferroelectic tunnel junctions

Lei Shen (沈雷), Tiejun Zhou, Zhaoqiang Bai, Minggang Zeng, Jing Qiang Goh, Zhi-min Yuan, Guchang Han, Bo Liu, and Yuan Ping Feng
Phys. Rev. B 85, 064105 – Published 9 February 2012

Abstract

Using the nonequilibrium Green's function method combined with density functional theory, we systematically study the ferroelectric, interfacial, oxidative, and doping effects on electron transport of BaTiO3-based ferroelectric tunnel junctions (Pt/BaTiO3/Pt). The ferroelectric effect reduces the tunneling conductance compared to nonferroelectric BaTiO3 due to the large decay rate of the Δ5 (py and dyz) band. The TiO2-terminated interface shows a better tunneling conductance than the BaO-terminated interface since electrons mainly transport through the Ti3d-Op bonding state. Interfacial oxidation strongly reduces the conductance due to trapping of electrons and interfacial charge localization by additional O ions, while Nb doping enhances the conductance due to the delocalized distribution of charges on orbitals of the transport channel. Our studies provide a useful guide to practical applications of tunnel junctions with ferroelectric barriers.

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  • Received 1 November 2011

DOI:https://doi.org/10.1103/PhysRevB.85.064105

©2012 American Physical Society

Authors & Affiliations

Lei Shen (沈雷)1,*, Tiejun Zhou1, Zhaoqiang Bai2,1, Minggang Zeng2, Jing Qiang Goh2, Zhi-min Yuan1, Guchang Han1, Bo Liu1, and Yuan Ping Feng2,†

  • 1Data Storage Institute, Agency for Science Technology and Research, 5 Engineering Drive 1, Singapore 117608, Singapore
  • 2Department of Physics, 2 Science Drive 3, National University of Singapore, Singapore 117542, Singapore

  • *Present address: Department of Physics, National University of Singapore.
  • phyfyp@nus.edu.sg

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Vol. 85, Iss. 6 — 1 February 2012

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