Molecular-dynamics simulations of the ablation of nanocrystalline Al films by ultrashort laser pulses in the low-fluence (no-ionization) regime (0–2.5 times the ablation threshold, $F_{\mathrm{th}}$) are reported. The simulations employ an embedded-atom method potential for the dynamics of the ions and a realistic two-temperature model for the electron gas (and its interactions with the ion gas), which confers different electronic properties to the monocrystalline solid, nanocrystalline solid, and liquid regions of the targets. The ablation dynamics in three nanocrystalline structures is studied: two dense targets with different crystallite sizes ($d=3.1$ and 6.2 nm on average) and a $d=6.2$ nm porous sample. The results are compared to the ablation of monocrystalline Al. Significant differences are observed, the nanocrystalline targets showing, in particular, a lower ablation threshold and a larger melting depth, and yielding pressure waves of higher amplitude than the monocrystalline targets. Furthermore, it is shown that nanocrystalline targets experience no residual stress associated with thermal expansion and lateral constraints, and that little crystal growth occurs in the solid during and after ablation. Laser-induced spallation of the back surface of the films is also investigated; we find, in particular, that the high-strain fracture resistance of nanocrystalline samples is significantly reduced in comparison to the crystalline material.

• Received 31 August 2011

DOI:https://doi.org/10.1103/PhysRevB.84.224110