Spin relaxation and coherence times for electrons at the Si/SiO2 interface

S. Shankar, A. M. Tyryshkin, Jianhua He, and S. A. Lyon
Phys. Rev. B 82, 195323 – Published 19 November 2010

Abstract

While electron spins in silicon heterostructures make attractive qubits, little is known about the coherence of electrons at the Si/SiO2 interface. We report spin relaxation (T1) and coherence (T2) times for mobile electrons and natural quantum dots at a S28i/SiO2 interface. Mobile electrons have short T1 and T2 of 0.3μs at 5 K. In line with predictions, confining electrons and cooling increases T1 to 0.8 ms at 350 mK. In contrast, T2 for quantum dots is around 10μs at 350 mK, increasing to 30μs when the dot density is reduced by a factor of two. The quantum dot T2 is shorter than T1, indicating that T2 is not controlled by T1 at 350 mK but is instead limited by an extrinsic mechanism. The evidence suggests that this extrinsic mechanism is an exchange interaction between electrons in neighboring dots.

  • Figure
  • Figure
  • Figure
  • Figure
  • Figure
  • Received 22 September 2010

DOI:https://doi.org/10.1103/PhysRevB.82.195323

©2010 American Physical Society

Authors & Affiliations

S. Shankar*, A. M. Tyryshkin, Jianhua He, and S. A. Lyon

  • Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544, USA

  • *Present address: Applied Physics Department, Yale University, New Haven, CT 06511, USA; shyam.shankar@yale.edu

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 82, Iss. 19 — 15 November 2010

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×