ac dynamics of ferroelectric domains from an investigation of the frequency dependence of hysteresis loops

S. M. Yang, J. Y. Jo, T. H. Kim, J.-G. Yoon, T. K. Song, H. N. Lee, Z. Marton, S. Park, Y. Jo, and T. W. Noh
Phys. Rev. B 82, 174125 – Published 30 November 2010

Abstract

We investigated the pinning dominated domain-wall dynamics under an ac field by studying the frequency (f) dependence of hysteresis loops of a uniaxial ferroelectric (FE) system. We measured the fully saturated polarization-electric field (PE) hysteresis loops of high-quality epitaxial 100-nm-thick PbZr0.2Ti0.8O3 capacitors at various f (5–2000 Hz) and temperatures T (10–300 K). We observed that the coercive field EC is proportional to fβ with two scaling regions, which was also reported earlier in magnetic systems [T. A. Moore and J. A. C. Bland, J. Phys.: Condens. Matter 16, R1369 (2004), and references therein]. In addition, we observed that the two scaling regions of EC vs f exist at all measured T. We found that the existence of the two scaling regions should come from a dynamic crossover between the creep and flow regimes of the FE domain-wall motions. By extending the theory of Nattermann et al., which was originally proposed for impure magnet systems [T. Nattermann, V. Pokrovsky, and V. M. Vinokur, Phys. Rev. Lett. 87, 197005 (2001)], to the disordered FE systems, we obtained analytical expressions for the dynamic crossovers between the relaxation and creep, and between the creep and flow regimes. By comparing with the experimental data from our fully saturated PE hysteresis loop measurements, we could construct a TE dynamic phase diagram with f as a parameter for hysteretic FE domain dynamics in the presence of an ac field.

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  • Received 25 October 2010

DOI:https://doi.org/10.1103/PhysRevB.82.174125

©2010 American Physical Society

Authors & Affiliations

S. M. Yang1, J. Y. Jo1, T. H. Kim1, J.-G. Yoon2, T. K. Song3, H. N. Lee4, Z. Marton4,5, S. Park6, Y. Jo6, and T. W. Noh1,*

  • 1ReCFI, Department of Physics and Astronomy, Seoul National University, Seoul 151-747, Korea
  • 2Department of Physics, University of Suwon, Hwaseong, Gyunggi-do 445-743, Korea
  • 3School of Nano and Advanced Materials Engineering, Changwon National University, Changwon, Gyeongnam 641-773, Korea
  • 4Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, Tennessee 37831, USA
  • 5Department of Materials Science and Engineering, University of Pennsylvania, Philadelphia, Pennsylvania 19104, USA
  • 6Division of Materials Science, Korea Basic Science Institute, Daejeon 305-333, Korea

  • *Author to whom correspondence should be addressed; twnoh@snu.ac.kr

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Issue

Vol. 82, Iss. 17 — 1 November 2010

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