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Koopmans’ condition for density-functional theory

Ismaila Dabo, Andrea Ferretti, Nicolas Poilvert, Yanli Li, Nicola Marzari, and Matteo Cococcioni
Phys. Rev. B 82, 115121 – Published 23 September 2010

Abstract

In approximate Kohn-Sham density-functional theory, self-interaction manifests itself as the dependence of the energy of an orbital on its fractional occupation. This unphysical behavior translates into qualitative and quantitative errors that pervade many fundamental aspects of density-functional predictions. Here, we first examine self-interaction in terms of the discrepancy between total and partial electron removal energies, and then highlight the importance of imposing the generalized Koopmans’ condition—that identifies orbital energies as opposite total electron removal energies—to resolve this discrepancy. In the process, we derive a correction to approximate functionals that, in the frozen-orbital approximation, eliminates the unphysical occupation dependence of orbital energies up to the third order in the single-particle densities. This non-Koopmans correction brings physical meaning to single-particle energies; when applied to common local or semilocal density functionals it provides results that are in excellent agreement with experimental data—with an accuracy comparable to that of GW many-body perturbation theory—while providing an explicit total energy functional that preserves or improves on the description of established structural properties.

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  • Received 29 June 2010

DOI:https://doi.org/10.1103/PhysRevB.82.115121

©2010 American Physical Society

Authors & Affiliations

Ismaila Dabo1,*, Andrea Ferretti2,†, Nicolas Poilvert2, Yanli Li3, Nicola Marzari2,†, and Matteo Cococcioni4

  • 1CERMICS, Projet Micmac ENPC-INRIA, Université Paris-Est, 6-8 avenue Blaise Pascal, 77455 Marne-la-Vallée Cedex 2, France
  • 2Department of Materials Science and Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA
  • 3Department of Physics, Institute of Theoretical Physics and Astrophysics, and Fujian Key Laboratory of Semiconductor Materials and Applications, Xiamen University, Xiamen 361005, Republic of China
  • 4Department of Chemical Engineering and Materials Science, University of Minnesota, Minneapolis, Minnesota 55455, USA

  • *daboi@cermics.enpc.fr
  • Present address: Department of Materials, University of Oxford, Parks Road, Oxford OX1 3PH, United Kingdom.

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Issue

Vol. 82, Iss. 11 — 15 September 2010

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