Local spin susceptibility in the zero-gap-semiconductor state of α(BEDT-TTF)2I3 probed by C13 NMR under pressure

Shinji Hirose and Atsushi Kawamoto
Phys. Rev. B 82, 115114 – Published 16 September 2010

Abstract

α(BEDT-TTF)2I3 has a double column structure with three crystallographically independent molecules, A, B, and C, and becomes an insulator below 135 K due to a charge-ordering (CO) transition. The CO state is suppressed under pressure and shows weak temperature dependence of the electrical resistance. The decline of the carrier density is observed over 1.8 GPa, suggesting a zero-gap-semiconductor state under high pressure. The local susceptibility on each site provides important information about the electronic band structure. In our previous work, molecular site B became spin poor and molecular site C became spin rich in the metallic state, suggesting the disproportionation of the local spin density. Therefore, it is worthwhile to investigate the behavior of the electron properties of each molecular site. We accessed the C13-NMR in this salt at ambient pressure and at 2.1 GPa. The analysis of the local spin susceptibility suggests that the disproportionation of the spin susceptibility at 2.1 GPa is enhanced from that at ambient pressure, and the spin susceptibility vanishes at low temperature at 2.1 GPa. Moreover, from the temperature dependence of T11, we obtain the relation of T11T3.1.

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  • Received 11 June 2010

DOI:https://doi.org/10.1103/PhysRevB.82.115114

©2010 American Physical Society

Authors & Affiliations

Shinji Hirose and Atsushi Kawamoto*

  • Department of Condensed Matter Physics, Hokkaido University, Kita-ku, Sapporo, Hokkaido 060-0810, Japan

  • *atkawa@phys.sci.hokudai.ac.jp

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Vol. 82, Iss. 11 — 15 September 2010

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