Electron grain boundary scattering and the resistivity of nanometric metallic structures

Ricardo Henriquez, Simon Cancino, Andres Espinosa, Marcos Flores, Thomas Hoffmann, German Kremer, Judit G. Lisoni, Luis Moraga, Roberto Morales, Simon Oyarzun, Marco Antonio Suarez, Alejandro Zúñiga, and Raul C. Munoz
Phys. Rev. B 82, 113409 – Published 23 September 2010

Abstract

The resistivity of metallic structures depends on both electron-grain boundary scattering and electron-surface scattering. By tuning the grain size, we have been able to separate the contribution to the resistivity originating in electron-grain boundary scattering, from that arising in electron-surface scattering, on gold films approximately 54 nm thick deposited onto mica substrates under high vacuum. Surprisingly, the resistivity measured between 4 and 300 K can be described by Drude’s model; it can be described as well by Mayadas’s theory using the grain boundary reflectivity R as the only adjustable parameter.

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  • Received 20 May 2010

DOI:https://doi.org/10.1103/PhysRevB.82.113409

©2010 American Physical Society

Authors & Affiliations

Ricardo Henriquez1, Simon Cancino2, Andres Espinosa1, Marcos Flores1, Thomas Hoffmann1, German Kremer2, Judit G. Lisoni1, Luis Moraga2, Roberto Morales2, Simon Oyarzun1, Marco Antonio Suarez1, Alejandro Zúñiga3, and Raul C. Munoz1,*

  • 1Departamento de Física, FCFM, Universidad de Chile, Blanco Encalada 2008, Santiago 8370449, Chile
  • 2Centro de Física Experimental (CEFEX), Facultad de Ciencias, Universidad de Chile, Las Palmeras 3425, Santiago 7800024, Chile
  • 3Departamento de Mecánica, FCFM, Universidad de Chile, Beauchef 850, Santiago 8370448, Chile

  • *Corresponding author; ramunoz@ing.uchile.cl

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Vol. 82, Iss. 11 — 15 September 2010

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