Optimal tuning of solid-state quantum gates: A universal two-qubit gate

E. Paladino, A. Mastellone, A. D’Arrigo, and G. Falci
Phys. Rev. B 81, 052502 – Published 9 February 2010

Abstract

We present a general route to reduce inhomogeneous broadening in nanodevices due to 1/f noise. We apply this method to a universal two-qubit gate and demonstrate that for selected optimal couplings, a high-efficient gate can be implemented even in the presence of 1/f noise. Entanglement degradation due to interplay of 1/f and quantum noise is quantified via the concurrence. A charge-phase iSWAP gate for spectra extrapolated from single-qubit experiments is analyzed.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 12 June 2009

DOI:https://doi.org/10.1103/PhysRevB.81.052502

©2010 American Physical Society

Authors & Affiliations

E. Paladino1,2, A. Mastellone3,1,2, A. D’Arrigo1,2, and G. Falci1,2

  • 1Dipartimento di Metodologie Fisiche e Chimiche (DMFCI), Università di Catania, Viale A. Doria 6, 95125 Catania, Italy
  • 2MATIS CNR-INFM, Catania, Italy
  • 3Centro Italiano Ricerche Aerospaziali (CIRA), Via Maiorise snc, Capua, 81043 Caserta, Italy

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 81, Iss. 5 — 1 February 2010

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×