Electronic structure and surface-mediated metastability of Bi films on Si(111)-7×7 studied by angle-resolved photoemission spectroscopy

G. Bian, T. Miller, and T.-C. Chiang
Phys. Rev. B 80, 245407 – Published 7 December 2009

Abstract

We have observed using angle-resolved photoemission a structural phase transformation of Bi films deposited on Si(111)-7×7. Films with thicknesses 20 to 100Å, upon annealing, first order into a metastable pseudocubic (PC) phase and then transform into a stable rhombohedral (RH) phase with very different topologies for the quantum-well subband structures. The PC phase shows a surface band with a maximum near the Fermi level at Γ¯, whereas the RH phase shows a Dirac-like subband around M¯ along K¯M¯K¯. The formation of the metastable phase over a wide thickness range can be attributed to a surface nucleation mechanism.

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  • Received 24 August 2009

DOI:https://doi.org/10.1103/PhysRevB.80.245407

©2009 American Physical Society

Authors & Affiliations

G. Bian, T. Miller, and T.-C. Chiang

  • Department of Physics, University of Illinois at Urbana–Champaign, 1110 West Green Street, Urbana, Illinois 61801-3080, USA and Frederick Seitz Materials Research Laboratory, University of Illinois at Urbana–Champaign, 104 South Goodwin Avenue, Urbana, Illinois 61801-2902, USA

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Vol. 80, Iss. 24 — 15 December 2009

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