Doping dependence of the Raman peaks intensity of graphene close to the Dirac point

C. Casiraghi
Phys. Rev. B 80, 233407 – Published 23 December 2009

Abstract

Here we use pristine graphene samples in order to analyze how the Raman peaks intensity, measured at 2.41 and 1.96 eV excitation energy, changes with the amount of doping. The use of pristine graphene allows investigating the intensity dependence close to the Dirac point. We show that the G peak intensity is independent on the doping, while the 2D peak intensity strongly decreases for increasing doping. Analyzing this dependence in the framework of a fully resonant process, we found that the total electron-phonon scattering rate is 40meV (60 ps1) at 2.41 eV.

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  • Received 28 August 2009

DOI:https://doi.org/10.1103/PhysRevB.80.233407

©2009 American Physical Society

Authors & Affiliations

C. Casiraghi

  • Physics Department, Free University, Arnimallee 14, 14195 Berlin, Germany

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Vol. 80, Iss. 23 — 15 December 2009

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