Hydrogen doping in indium oxide: An ab initio study

Sukit Limpijumnong, Pakpoom Reunchan, Anderson Janotti, and Chris G. Van de Walle
Phys. Rev. B 80, 193202 – Published 9 November 2009

Abstract

First-principles density-functional theory is employed to investigate the role of hydrogen impurities in In2O3. We find that both interstitial hydrogen (Hi) and substitutional hydrogen (HO) act as shallow donors. Our results support recent experiments by Koida et al. [Jpn. J. Appl. Phys. 46, L685 (2007)], which found hydrogen-doped In2O3 to be a good candidate for transparent conducting films.

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  • Received 14 August 2009

DOI:https://doi.org/10.1103/PhysRevB.80.193202

©2009 American Physical Society

Authors & Affiliations

Sukit Limpijumnong1,2,3, Pakpoom Reunchan1,2, Anderson Janotti1, and Chris G. Van de Walle1

  • 1Materials Department, University of California, Santa Barbara, California 93106-5050, USA
  • 2School of Physics, Suranaree University of Technology and Synchrotron Light Research Institute, Nakhon Ratchasima 30000, Thailand
  • 3Thailand Center of Excellence in Physics (ThEP Center), Commission on Higher Education, Bangkok 10400, Thailand

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Issue

Vol. 80, Iss. 19 — 15 November 2009

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