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Electronic structure and electron-phonon coupling of doped graphene layers in KC8

A. Grüneis, C. Attaccalite, A. Rubio, D. V. Vyalikh, S. L. Molodtsov, J. Fink, R. Follath, W. Eberhardt, B. Büchner, and T. Pichler
Phys. Rev. B 79, 205106 – Published 8 May 2009

Abstract

We propose graphite intercalation compounds (GICs) as a material system with precisely the same electronic properties as doped few layer graphene. Despite the fact that GICs have been around for the last four decades, this fact has gone unnoticed so far. Especially, we focus on the electronic energy bands of KC8 which correspond to a doped graphene monolayer. We provide extensive theoretical and experimental evidence for this claim employing a combined angle-resolved photoemission and theory approach using tight-binding, standard density-functional theory and including electron-electron correlation on a GW level. We observe a strong momentum-dependent kink in the quasiparticle dispersion at 166 meV highlighting electron-phonon coupling to an in-plane transversal optical phonon. These results are key for understanding both the unique electronic properties of doped graphene layers and superconductivity in KC8.

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  • Received 9 February 2009

DOI:https://doi.org/10.1103/PhysRevB.79.205106

©2009 American Physical Society

Authors & Affiliations

A. Grüneis1,2, C. Attaccalite3, A. Rubio3, D. V. Vyalikh4, S. L. Molodtsov4, J. Fink2,5, R. Follath5, W. Eberhardt5, B. Büchner1, and T. Pichler1

  • 1Faculty of Physics, University of Vienna, Boltzmanngasse 5, A-1090 Vienna, Austria
  • 2IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany
  • 3Departamento de Fisica de Materiales, Nano-Bio Spectroscopy Group and European Theoretical Spectroscopy Facility (ETSF), Unidad de Materiales Centro Mixto CSIC-UPV/EHU, Universidad del Pais Vasco, Avenida de Tolosa 72, E-20018 Donostia, Spain
  • 4Institut für Festkörperphysik, TU Dresden, Mommsenstrasse 13, D-01069 Dresden, Germany
  • 5Helmholtz-Zentrum Berlin, Albert-Einstein-Strasse 15, 12489 Berlin, Germany

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Issue

Vol. 79, Iss. 20 — 15 May 2009

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