Doping evolution of the electronic structure in the single-layer cuprate Bi2Sr2xLaxCuO6+δ: Comparison with other single-layer cuprates

M. Hashimoto, T. Yoshida, H. Yagi, M. Takizawa, A. Fujimori, M. Kubota, K. Ono, K. Tanaka, D. H. Lu, Z.-X. Shen, S. Ono, and Yoichi Ando
Phys. Rev. B 77, 094516 – Published 24 March 2008

Abstract

We have performed angle-resolved photoemission and core-level x-ray photoemission studies of the single-layer cuprate Bi2Sr2xLaxCuO6+δ (Bi2201) and revealed the doping evolution of the electronic structure from the lightly doped to optimally doped regions. We have observed the formation of the dispersive quasiparticle band, evolution of the Fermi “arc” into the Fermi surface, and the shift of the chemical potential with hole doping as in other cuprates. The doping evolution in Bi2201 is similar to that in Ca2xNaxCuO2Cl2 (Na-CCOC), where a rapid chemical potential shift toward the lower Hubbard band of the parent insulator has been observed, but is quite different from that in La2xSrxCuO4 (LSCO), where the chemical potential does not shift, yet the dispersive band and the Fermi arc and/or surface are formed around the Fermi level already in the lightly doped region. The (underlying) Fermi surface shape and band dispersions are quantitatively analyzed using tight-binding fit, and the deduced next-nearest-neighbor hopping integral t also confirms the similarity to Na-CCOC and the difference from LSCO.

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  • Received 27 December 2007
  • Corrected 28 March 2008

DOI:https://doi.org/10.1103/PhysRevB.77.094516

©2008 American Physical Society

Corrections

28 March 2008

Erratum

Publisher's Note: Doping evolution of the electronic structure in the single-layer cuprate Bi2Sr2xLaxCuO6+δ: Comparison with other single-layer cuprates [Phys. Rev. B 77, 094516 (2008)]

M. Hashimoto, T. Yoshida, H. Yagi, M. Takizawa, A. Fujimori, M. Kubota, K. Ono, K. Tanaka, D. H. Lu, Z.-X. Shen, S. Ono, and Yoichi Ando
Phys. Rev. B 77, 139902 (2008)

Authors & Affiliations

M. Hashimoto, T. Yoshida, H. Yagi, M. Takizawa, and A. Fujimori

  • Department of Physics, University of Tokyo, Hongo, Tokyo 113-0033, Japan

M. Kubota and K. Ono

  • Photon Factory, Institute of Materials Structure Science, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki, 305-0801, Japan

K. Tanaka, D. H. Lu, and Z.-X. Shen

  • Department of Physics, Applied Physics, and Stanford Synchrotron Radiation Laboratory, Stanford University, Stanford, California 94305, USA

S. Ono

  • Central Research Institute of Electric Power Industry, Komae, Tokyo 201-8511, Japan

Yoichi Ando

  • Institute of Scientific and Industrial Research, Osaka University, Ibaraki, Osaka 567-0047, Japan

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Issue

Vol. 77, Iss. 9 — 1 March 2008

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