Internal mobility edge in doped graphene: Frustration in a renormalized lattice

Gerardo G. Naumis
Phys. Rev. B 76, 153403 – Published 9 October 2007

Abstract

We show that a localization mobility edge can appear around the Fermi energy in graphene by introducing impurities or by producing vacancies in the lattice. The edge appears at the center of the spectrum and not at the band edges, in contrast with the usual picture of localization. Such result is explained by showing that the bipartite nature of the lattice allows one to renormalize the Hamiltonian, and this internal edge appears because of frustration effects in the renormalized lattice. The size in energy of the spectral region with localized states is similar in value to that observed in narrow gap semiconductors.

  • Figure
  • Figure
  • Figure
  • Figure
  • Received 19 June 2007

DOI:https://doi.org/10.1103/PhysRevB.76.153403

©2007 American Physical Society

Authors & Affiliations

Gerardo G. Naumis

  • Departamento de Física-Química, Instituto de Física, Universidad Nacional Autónoma de México (UNAM), Apartado Postal 20-364, 01000 México, Distrito Federal, Mexico

Article Text (Subscription Required)

Click to Expand

References (Subscription Required)

Click to Expand
Issue

Vol. 76, Iss. 15 — 15 October 2007

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×