Figure 1

The magnetoconductance trace at $300\mathrm{mK}$ and zero gate voltage for a single nanowire measured in a four-point configuration (inset shows a scanning electron image of the device). The presence of conductance fluctuations indicates a short elastic scattering length and the symmetry in magnetic field reflects a high transparency of the metal contacts to the wire.Reuse & Permissions

Figure 2

(a) The average conductance per wire, measured on an array of 45 InAs nanowires connected in parallel, at a temperature of $8\mathrm{K}$. Below $-3\mathrm{V}$, the wires start to pinch off and consequently measurements were only done for larger gate voltages. The inset shows a scanning electron microscopy image of several wires with electrical contacts. In (b) the magnetoconductance, offset to zero at zero magnetic field, is plotted for six different gate voltages at a temperature of $8\mathrm{K}$ (open circles). A crossover from WAL to WL takes place as the gate voltage is decreased. Lines are fits to Eq. (3), explained in Sec. 3.Reuse & Permissions

Figure 3

The temperature dependence of the magnetoconductance at zero gate voltage for 45 wires connected in parallel. A crossover from WAL to WL occurs as the temperature is increased beyond $20\mathrm{K}$. At low temperatures conductance fluctuations appear.Reuse & Permissions

Figure 4

We compare the two models used, Eq. (1) (dirty limit) and Eq. (3) (pure limit), by showing the difference between the fitted curves and measured conductance as function of magnetic field for 45 parallel wires. As an example the data measured at a gate voltage of $10\mathrm{V}$ is shown. At this gate voltage, we observe the largest differences between fits and data.Reuse & Permissions

Figure 5

The parameters extracted from the fits to the measured magnetoconductance obtained at $8\mathrm{K}$, as a function of voltage applied to the back gate. The filled symbols are obtained using Eq. (3) (pure limit) and the open symbols using Eq. (1) (dirty limit). The error bars display the standard deviations of the fits.Reuse & Permissions

Figure 6

The parameters extracted from the fits to the measured data at zero gate voltage, as a function of temperature. Fits to the data were done according to Eq. (3) (pure limit). The crossover from WAL to WL, seen at high temperature in Fig. 3, occurs when the phase coherence becomes smaller than the spin relaxation length. The error bars display the standard deviations of the fits.Reuse & Permissions