${E}^{2}$ phase transition: Thin-film breakdown and Schottky-barrier suppression

$E^{2}$ phase transition: Thin-film breakdown and Schottky-barrier suppression

V. G. Karpov, D. Shvydka, and Y. Roussillon

Phys. Rev. B 70, 155332 – Published 29 October 2004

Abstract

We discuss the electrostatic energy driven type of phase transitions in thin films. They occur under external or built-in electric fields. In the course of transition, the electrostatic energy $(\propto E^{2})$ discharges into structural defects. This may lead to dielectric-film breakdown or Schottky-barrier suppression in semiconductor film junctions. The $E^{2}$ transitions exhibit the first-order phase transition kinetics, including both the nucleation and spinodal decomposition scenarios.