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Temperature dependence of the exciton homogeneous linewidth in In0.60Ga0.40As/GaAs self-assembled quantum dots

M. Bayer and A. Forchel
Phys. Rev. B 65, 041308(R) – Published 10 January 2002
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Abstract

Single dot photoluminescence spectroscopy was used to study the homogeneous linewidth Γ of the ground-state exciton in In0.60Ga0.40As/GaAs quantum dots as function of temperature T. In high resolution experiments at 2 K, we find a linewidth that is limited by the excitonic lifetime corresponding to a dephasing time of almost a ns. The approximately linear increase of Γ with temperature up to 30μeV at 60 K is considerably weaker than in structures of higher dimensionality. For higher T we observe a strong enhancement of the linewidth reaching eventually a few meV at room temperature that depends on the confined electronic shell structure.

  • Received 11 November 2001

DOI:https://doi.org/10.1103/PhysRevB.65.041308

©2002 American Physical Society

Authors & Affiliations

M. Bayer and A. Forchel

  • Technische Physik, Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany

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Vol. 65, Iss. 4 — 15 January 2002

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