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Temperature dependence of magnetoresistance and surface magnetization in ferromagnetic tunnel junctions

Chang He Shang, Janusz Nowak, Ronnie Jansen, and Jagadeesh S. Moodera
Phys. Rev. B 58, R2917(R) – Published 1 August 1998
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Abstract

The temperature dependence of spin-polarized tunneling is investigated between 77 and 420 K for various ferromagnetic tunnel junctions. Both the junction resistance and the magnetoresistance decrease with increasing temperature T. The experimental results are successfully described by a model that includes two current contributions. The dominant one is elastic, spin-polarized tunneling between the two ferromagnetic electrodes, each with an electron polarization P that decreases with T due to thermally excited spin waves according to P(1αT3/2), i.e., in the same way as the surface magnetization. A smaller second conductance is due to assisted, spin-independent tunneling which we find to be proportional to T1.35±0.15.

  • Received 12 May 1998

DOI:https://doi.org/10.1103/PhysRevB.58.R2917

©1998 American Physical Society

Authors & Affiliations

Chang He Shang*, Janusz Nowak, Ronnie Jansen, and Jagadeesh S. Moodera

  • Francis Bitter Magnet Laboratory, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139

  • *Present address: Department of Materials Science and Engineering, The Johns Hopkins University, Baltimore, MD 21218.
  • Corresponding author.

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Vol. 58, Iss. 6 — 1 August 1998

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