Magnetoresistance of an entangled single-wall carbon-nanotube network

G. T. Kim, E. S. Choi, D. C. Kim, D. S. Suh, Y. W. Park, K. Liu, G. Duesberg, and S. Roth
Phys. Rev. B 58, 16064 – Published 15 December 1998
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Abstract

The resistivity ρ(T) and magnetoresistance (MR) (Δρ/ρ) of an entangled single-wall carbon-nanotube network are investigated. The temperature dependence of the resistivity shows a negative dρ/dT from T=4.3300K with no resistivity minimum, which is fitted well to the two-dimensional variable-range-hopping (VRH) (ρ(T)=ρ0exp[(T0/T)1/3]) formula with T0=259.2K. The MR shows a negative H2 behavior at low magnetic field. At T<~3.8K and high magnetic field, the negative MR becomes positive. The positive MR tends to be saturated for H>10T. The negative MR with a positive upturn can be decomposed into a positive contribution from the two-dimensional spin-dependent VRH and a negative contribution from the two-dimensional weak localization, with some contribution of the Ni impurities in the sample found with the transmission electron microscope and by energy dispersive spectrometer analysis.

  • Received 22 April 1998

DOI:https://doi.org/10.1103/PhysRevB.58.16064

©1998 American Physical Society

Authors & Affiliations

G. T. Kim, E. S. Choi, D. C. Kim, D. S. Suh, and Y. W. Park*

  • Department of Physics and Condensed Matter Research Institute, Seoul National University, Seoul 151-742, Korea

K. Liu, G. Duesberg, and S. Roth

  • Max-Planck Institut für Festkörperforschung, Heisenbergstraße 1, D-70569 Stuttgart, Germany

  • *Author to whom correspondence should be addressed. Electronic address: ywpark@plaza.snu.ac.kr

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Vol. 58, Iss. 24 — 15 December 1998

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