Electronic states of the heteroepitaxial double-layer system: Graphite/monolayer hexagonal boron nitride/Ni(111)

A. Nagashima, Y. Gamou, M. Terai, M. Wakabayashi, and C. Oshima
Phys. Rev. B 54, 13491 – Published 15 November 1996
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Abstract

By using angle-resolved ultraviolet photoelectron spectroscopy, x-ray photoelectron spectroscopy, and work function measurement, we have explored the electronic states of the heteroepitaxial double-layer (HEDL) system composed of Ni(111), monolayer hexagonal boron nitride, and graphite overlayer. Present data clearly indicate that in the HEDL system, the spatial change of the electronic states at the interfaces is abrupt in atomic scale. © 1996 The American Physical Society.

  • Received 3 June 1996

DOI:https://doi.org/10.1103/PhysRevB.54.13491

©1996 American Physical Society

Authors & Affiliations

A. Nagashima

  • Department of Physics, Tokyo Institute of Technology, 2-12-1 Oh-okayama, Meguro-ku, Tokyo 152, Japan

Y. Gamou, M. Terai, M. Wakabayashi, and C. Oshima

  • Department of Applied Physics, Waseda University, 3-4-1 Okubo, Shinjuku-ku, Tokyo 169, Japan

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Vol. 54, Iss. 19 — 15 November 1996

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