${\mathrm{In}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$As/${\mathrm{In}}_{1\mathrm{-}\mathit{y}}$${\mathrm{Ga}}_{\mathit{y}}$As strained layer superlattices grown on InP substrates are interesting candidates for optoelectronic device applications. When embedded in the intrinsic region of a p-i-n diode, the optical properties of such shallow strained superlattice devices depend critically on the precise control of the layer parameters and the built-in electric field. In this work, we investigate in detail the structural and optical properties of a series of ${\mathrm{In}}_{1\mathrm{-}\mathit{x}}$${\mathrm{Ga}}_{\mathit{x}}$As/${\mathrm{In}}_{1\mathrm{-}\mathit{y}}$${\mathrm{Ga}}_{\mathit{y}}$As superlattices with nominally lattice-matched wells and up to 1.5% tensile strained barriers, embedded in the intrinsic region of InP p-i-n diodes. The structural parameters have been determined from a careful line-shape analysis of x-ray rocking curves. An accurate model of the field-dependent electronic states in the superlattices has been developed. We find that the analysis of absorption and emission experiments requires taking into account the electric field screening by the photoinduced carriers. For fields above a few kV/cm, the optical properties are dominated by the mixed type-I–type-II band structure of the strained superlattices. © 1996 The American Physical Society.

• Received 18 December 1995

DOI:https://doi.org/10.1103/PhysRevB.53.15706