Influence of electromagnetic environmental fluctuations on resonant tunneling through double-barrier systems

Xin-Qi Li, ShaoJin Qin, and Zhao-Bin Su
Phys. Rev. B 51, 5214 – Published 15 February 1995
PDFExport Citation

Abstract

By applying the nonequilibrium Green’s function approach, we study the resonant tunneling through double-barrier structures involving the interaction of the tunneling electron with the electromagnetic (EM) environmental fluctuations, which is characterized by the environmental resistance and capacitance. Our results show that the dissipative behaviors are qualitatively the same for zero temperature and low temperatures. However, the effect of the dissipation becomes more and more insensitive to the environmental resistance for a fixed capacitance as the temperature increases. At higher temperatures, we find the effect of the EM environmental fluctuations can be probed by changing the capacitance rather than the resistance. An interesting comparison with the dissipative feature of the electron-LO-phonon interaction is made in this regime.

  • Received 5 July 1994

DOI:https://doi.org/10.1103/PhysRevB.51.5214

©1995 American Physical Society

Authors & Affiliations

Xin-Qi Li

  • China Center of Advanced Science and Technology (World Laboratory), P.O. Box 8730, Beijing 100080, China
  • Institute of Theoretical Physics, Academia Sinica, P.O. Box 2735, Beijing 100080, China

ShaoJin Qin and Zhao-Bin Su

  • Institute of Theoretical Physics, Academia Sinica, P.O. Box 2735, Beijing, 100080, China

References (Subscription Required)

Click to Expand
Issue

Vol. 51, Iss. 8 — 15 February 1995

Reuse & Permissions
Access Options
Author publication services for translation and copyediting assistance advertisement

Authorization Required


×
×

Images

×

Sign up to receive regular email alerts from Physical Review B

Log In

Cancel
×

Search


Article Lookup

Paste a citation or DOI

Enter a citation
×