Abstract
Scanning-photoemission-spectromicroscopy data revealed substantial inhomogeneities in the lineup of the electronic states at the interface between the two semiconductors GaSe and Ge. These inhomogeneities would lead to valence-band discontinuity changes from place to place, whose magnitude is approximately 0.4 eV.
- Received 7 October 1994
DOI:https://doi.org/10.1103/PhysRevB.51.5024
©1995 American Physical Society