Abstract
The LO-phonon resonant Raman scattering is studied in GaAs/As Bragg-confining structures at low temperatures. Comparative studies are made on a GaAs/As superlattice and on a bulk As crystal. A strong scattering intensity is observed in the spectral range of the (:)1S, (:)1S Bragg-confined excitions and the (:)1S superlattice exciton. The Raman profiles, namely, the scattering intensity versus exciting laser energy (in the respective spectral ranges) are characterized by a large outgoing-beam/incoming-beam intensity ratio. These profiles are analyzed in terms of a model based on exciton confinement, on the anisotropy of its 1S wave function (which defines its dimensionality), and on its scattering by interface and alloy potential fluctuations. The (:)1S exciton is thus found to be virtually two-dimensional, while the (:)1S and (:)1S excitons are intermediate between two and three dimensions. The dimensionality is found to be related to the degree of confinement.
- Received 17 March 1994
DOI:https://doi.org/10.1103/PhysRevB.50.5305
©1994 American Physical Society