Temperature-dependent surface morphologies resulting from spontaneous Br etching of Si(100)-2×1 in the range 600–1100 K have been studied using scanning tunneling microscopy. The etch pits and Si structures on the exposed surfaces exhibit temperature-dependent shape, size, and distribution characteristics. Although the morphology depends on temperature, the steady-state removal of Si is dominated by layer-by-layer etching that produces bounded surface roughness. Temperature-dependent kinetics, surface reactivities, and product evolution are responsible for the different morphologies.

• Received 22 April 1994

DOI:https://doi.org/10.1103/PhysRevB.50.4430