Zone-center optical phonons in InxGa1xAs alloys

Z. S. Piao, H. I. Jeon, E.-K. Suh, and H. J. Lee
Phys. Rev. B 50, 18644 – Published 15 December 1994
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Abstract

We have calculated the frequencies of zone-center optical phonons in InxGa1xAs as well as AlxGa1xAs by using a modified random-element-isodisplacement model and obtained good agreement with experimental values. The optical phonons in InxGa1xAs exhibit two-mode behavior as in the case of AlxGa1xAs. The force constants in terms of the alloy compositions were discussed.

  • Received 20 July 1994

DOI:https://doi.org/10.1103/PhysRevB.50.18644

©1994 American Physical Society

Authors & Affiliations

Z. S. Piao, H. I. Jeon, E.-K. Suh, and H. J. Lee

  • Department of Physics and Semiconductor Physics Research Center, Jeonbuk National University, Jeonju 560-756, Republic of Korea

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Vol. 50, Iss. 24 — 15 December 1994

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